| PART |
Description |
Maker |
| M29W064FB90N3E M29W064FB90N3F M29W064FT |
64 Mbit (8 Mbit x 8 or 4 Mbit x 16, page, boot block) 3 V supply Flash memory
|
Numonyx B.V
|
| M29F105B |
1Mbit (64Kb x16, Block Erase) Single Supply Flash Memory(1Mb闪速存储器)
|
意法半导
|
| M25PX32 |
32-Mbit, dual I/O, 4-Kbyte subsector erase, serial Flash memory with 75 MHz SPI bus interface
|
Numonyx B.V
|
| M25PX64-VMF6TP |
64-Mbit, dual I/O, 4-Kbyte subsector erase, serial flash memory with 75 MHz SPI bus interface
|
Numonyx B.V
|
| M25PX16 M25PX16-VMN6TP M25PX16SOVZM6TP |
16-Mbit, dual I/O, 4-Kbyte subsector erase, serial Flash memory with 75 MHz SPI bus interface
|
Micron Technology
Numonyx B.V
|
| M29F032D M29F032D70 7946 M29F032D70N1 M29F032D70N1 |
32 MBIT (4MB X8, UNIFORM BLOCK) 5V SUPPLY FLASH MEMORY
32 Mbit 4Mb x8 / Uniform Block 5V Supply Flash Memory
32 MBIT (4MB X8, UNIFORM BLOCK) 5V SUPPLY FLASH MEMORY
32 Mbit 4Mb x8 Uniform Block 5V Supply Flash Memory
From old datasheet system
|
ST Microelectronics
STMICROELECTRONICS[STMicroelectronics]
|
| AM29F016 AM29F016-90 AM29F016-75 AM29F016-75FIB AM |
LM330 3-Terminal Positive Regulator; Package: TO-220; No of Pins: 3; Qty per Container: 45; Container: Rail
16-Megabit097152*8-bit）CMOS 5.0 Volt-only，sector Erase Flash memory
LM32 Dual Thermal Diode Temperature Sensor with SensorPath™ Bus; ; Qty per Container: 1
LM3310 Step-Up PWM DC/DC Converter with Integrated Op-Amp and Gate Pulse Modulation Switch; Package: LLP; No of Pins: 24; Qty per Container: 4500; Container: Reel 16兆位097152 × 8位）CMOS 5.0伏只，扇区擦除闪
16-Megabit (2,097,152 x 8-Bit) CMOS 5.0 Volt-only, Sector Erase Flash Memory 2M X 8 FLASH 5V PROM, 120 ns, PDSO44
16-Megabit (2,097,152 x 8-Bit) CMOS 5.0 Volt-only, Sector Erase Flash Memory 2M X 8 FLASH 5V PROM, 90 ns, PDSO48
16-Megabit (2,097,152 x 8-Bit) CMOS 5.0 Volt-only, Sector Erase Flash Memory 2M X 8 FLASH 5V PROM, 150 ns, PDSO48
16-Megabit (2,097,152 x 8-Bit) CMOS 5.0 Volt-only, Sector Erase Flash Memory 2M X 8 FLASH 5V PROM, 120 ns, PDSO48
|
Advanced Micro Devices, Inc.
SPANSION LLC
|
| N25Q032A13E1241F N25Q032A13ESE40G N25Q032A13ESC40G |
32-Mbit 3 V, multiple I/O, 4-Kbyte subsector erase, XiP enabled, serial flash memory with 108 MHz SPI bus interface
|
Micron Technology
|
| 28F160F3 GT28F160F3B120 DE28F800B3T150 DE28F800B3B |
5V/3.3V or Adjustable, Low-Dropout, Low-IQ, 500mA Linear Regulators 快速启动块闪存6兆比
FAST BOOT BLOCK FLASH MEMORY FAMILY 8 AND 16 MBIT 512K X 16 FLASH 3V PROM, 150 ns, PDSO56
CAP 6800UF 6.3V ELECT FC RADIAL
16MBIT Fast Boot Block Flash Memory(16兆位的快速引导块闪速存储器)
|
Intel Corporation
Intel, Corp.
Intel Corp.
|
| M5M29FB800RV-80 M5M29FT800RV-80 M5M29FB800FP M5M29 |
8,388,608-BIT (1048,576-WORD BY 8-BIT / 524,288-WORD BY16-BIT) CMOS 3.3V-ONLY, BLOCK ERASE FLASH MEMORY
From old datasheet system
8 /388 /608-BIT (1048 /576-576-WORD BY 8-BIT / 524 /288-WORD BY16-BIT)CMOS 3.3V-ONLY / BLOCK ERASE FLASH MEMORY
8,388,608-BIT (1048,576-576-WORD BY 8-BIT / 524,288-WORD BY16-BIT)CMOS 3.3V-ONLY, BLOCK ERASE FLASH MEMORY
|
Mitsubishi Electric Semiconductor
Mitsubishi Electric Corporation
|
| M29W128GH70N3E M29W128GL |
128-Mbit (16 Mbit x8 or 8 Mbit x16, page, uniform block) 3 V supply flash memory
128-Mbit (16 Mbit x8 or 8 Mbit x16, page, uniform block) 3 V supply flash memory
|
Numonyx B.V
|
| N25Q128A13TSF40E N25Q128A13TSF40F N25Q128A13TSF40G |
128-Mbit 3 V, multiple I/O, 4-Kbyte subsector erase on boot sectors,XiP enabled, serial flash memory with 108 MHz SPI bus interface
|
Numonyx B.V
|
